Method of manufacturing a semiconductor device using oblique ion injection
US6613634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Aug 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
Abstract
Upon formation, by oblique ion injection, of a pocket ion region in a p channel type MISFET forming region (n type well) constituting an SRAM, the p channel type MISFET forming region is disposed at a distance from a resist film formed over an n channel type MISFET forming region (p type well), which distance is the product of the thickness H of the resist film and the tangent of an ion injection angle &thgr;. Consequently, an impurity is not injected from one direction in other areas, in spite of the injection from four directions, which makes it possible to suppress fluctuations of the impurity concentration in the pocket ion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.