Production of metal insulator metal (MIM) structures using anodizing process
US6613641B1 · kind B1 · utility
9Cited by
18References
8Claims
0Family size
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Key dates
| Filing date | Jan 17, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Jan 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal-insulator-metal capacitor structures are formed in semiconductor substrates using an anodization procedure on deposited underlying metalization followed by deposition of the second metal and planarization by chemical-mechanical polishing or other procedures. The process is additive in character, as opposed to traditional subtractive etch processes for forming capacitor structures. In addition, the process can be used in damascene applications, and can be used to form a wide variety of capacitive structures while reducing the number of mask layers required for formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.