Kenneth J. Stein
47Patents
13h-index
104Co-inventors
84Inventor score
Filing activity: Apr 1, 1996 → Sep 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6621392B1 | Micro electromechanical switch having self-aligned spacers | Electricity | 136 | Expired |
| US6635506B2 | Method of fabricating micro-electromechanical switches on CMOS compatible substrates | Performing Operations; Transporting | 83 | Expired |
| US6701779B2 | Perpendicular torsion micro-electromechanical switch | Electricity | 63 | Expired |
| US5926359A | Metal-insulator-metal capacitor | Electricity | 50 | Expired |
| US7202764B2 | Noble metal contacts for micro-electromechanical switches | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6890810B2 | Method of fabrication of thin film resistor with zero TCR | Electricity | 31 | Expired |
| US6661069B1 | Micro-electromechanical varactor with enhanced tuning range | Emerging Cross-Sectional Technologies | 30 | Expired |
| US7867839B2 | Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors | Electricity | 19 | Active |
| US6798029B2 | Method of fabricating micro-electromechanical switches on CMOS compatible substrates | Electricity | 17 | Expired |
| US6597068B2 | Encapsulated metal structures for semiconductor devices and MIM capacitors including the same | Electricity | 14 | Expired |
| US8159040B2 | Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor | Electricity | 13 | Active |
| US6992344B2 | Damascene integration scheme for developing metal-insulator-metal capacitors | Electricity | 13 | Expired |
| US6780695B1 | BiCMOS integration scheme with raised extrinsic base | Electricity | 13 | Expired |
| US6368953B1 | Encapsulated metal structures for semiconductor devices and MIM capacitors including the same | Electricity | 13 | Expired |
| US6284619A | Integration scheme for multilevel metallization structures | Electricity | 12 | Expired |
| US6472288B2 | Method of fabricating bipolar transistors with independent impurity profile on the same chip | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7022246B2 | Method of fabrication of MIMCAP and resistor at same level | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6927476B2 | Bipolar device having shallow junction raised extrinsic base and method for making the same | Electricity | 11 | Expired |
| US8062951B2 | Method to increase effective MOSFET width | Electricity | 10 | Active |
| US6613641B1 | Production of metal insulator metal (MIM) structures using anodizing process | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6696343B1 | Micro-electromechanical varactor with enhanced tuning range | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7068138B2 | High Q factor integrated circuit inductor | Electricity | 8 | Expired |
| US7638406B2 | Method of fabricating a high Q factor integrated circuit inductor | Electricity | 8 | Active |
| US6940117B2 | Prevention of Ta2O5 mim cap shorting in the beol anneal cycles | Electricity | 7 | Expired |
| US6756624B2 | Encapsulated metal structures for semiconductor devices and MIM capacitors including the same | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.