Patent · US Expired

Avalanche photodetector

US6614086B2 · kind B2 · utility

8Cited by

5References

18Claims

0Family size

Assignee

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

Gyung-Ock Kim · Seoul, KR
In Kyu Kim · Daejeon, KR
Kwang Eui Pyun · Daejeon, KR

Key dates

Filing date	Aug 13, 2001
Grant date	Sep 2, 2003
Priority date	—
Expiry date	Aug 13, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/337
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top contact layer) stacked on a substrate. The photodetector further comprises multiple avalanche-gain layered structures consisting of a charge layer, a multiplication layer and a contact layer between the light absorption layer and said collector layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.