Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM
US6614687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | May 3, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/565
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A new structure and method with a process tracking current source component to program a flash EPROM memory is proposed. By applying a current source which varies not only with the process variation but also with the source bias of the cell being programmed, a self-convergent and high-efficiency programming can be achieved. This process tracking current source component provides less current for cells with higher erased Vt and larger current for cells with lower erased Vt.A circuit for programming a floating gate transistor includes a current source component. The current source component couples in series between the floating gate transistor and an electrical sink during a programming interval. The current source component includes an electrical characteristic substantially matching the electrical characteristic of the floating gate transistor.An integrated circuit memory module on a semiconductor substrate is disclosed. The integrated circuit memory module includes: an array of floating gate memory cells, decoders, and a plurality of current source components. The array of floating gate memory cells is arranged in M rows and N columns. The decoders couple to the M rows and N colu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.