Wafer drying apparatus and method
US6615510B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 28, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Aug 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6776
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Liquid is removed from wafers for drying a wafer that has been wet in a liquid bath. The wafer and the bath are separated at a controlled rate as the wafer is positioned in a gas-filled volume. The controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the wafer when the liquid bath and the wafer are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the wafer in the gas-filled volume. Hot gas directed into the volume and across the wafer and out of the volume continuously transfers thermal energy to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.