GePSG core for a planar lightwave circuit
US6615615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12169
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of depositing a core layer for an optical waveguide structure of a planar lightwave circuit. A GePSG core for an optical waveguide structure of a planar lightwave circuit is fabricated such that the optical core comprises doped silica glass, wherein the dopant includes Ge and P. In depositing a core layer from which the optical core is formed, two separate doping gasses (e.g., GeH4 and PH3) are added during the PECVD process to make Ge and P doped silica glass (GePSG). The ratio of the Ge dopant and the P dopant is configured to maintain a constant refractive index within the core layer across an anneal temperature range and to reduce a formation of bubbles within the core layer. The ratio of the Ge dopant and the P dopant is also configured to reduce refractive index birefringence within the core layer across an anneal temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.