Jonathan Bornstein
20Patents
10h-index
22Co-inventors
75Inventor score
Filing activity: Jul 31, 1984 → Nov 11, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5661592A | Method of making and an apparatus for a flat diffraction grating light valve | Emerging Cross-Sectional Technologies | 254 | Expired |
| US4539625A | Lighting system combining daylight concentrators and an artificial source | Mechanical Engineering; Lighting; Heating | 88 | Expired |
| US7742323B2 | Continuous plane of thin-film materials for a two-terminal cross-point memory | Emerging Cross-Sectional Technologies | 50 | Active |
| US7888711B2 | Continuous plane of thin-film materials for a two-terminal cross-point memory | Emerging Cross-Sectional Technologies | 39 | Active |
| US4876117A | Method and coating transition metal oxide on thin film magnetic disks | Emerging Cross-Sectional Technologies | 23 | Expired |
| US8003511B2 | Memory cell formation using ion implant isolated conductive metal oxide | Electricity | 22 | Active |
| US7897951B2 | Continuous plane of thin-film materials for a two-terminal cross-point memory | Electricity | 22 | Active |
| US6615615B2 | GePSG core for a planar lightwave circuit | Physics | 18 | Expired |
| US7618894B2 | Multi-step selective etching for cross-point memory | Electricity | 16 | Active |
| US9923201B2 | Structurally controlled deposition of silicon onto nanowires | Emerging Cross-Sectional Technologies | 10 | Active |
| US8237142B2 | Continuous plane of thin-film materials for a two-terminal cross-point memory | Electricity | 10 | Active |
| US6705124B2 | High-density plasma deposition process for fabricating a top clad for planar lightwave circuit devices | Physics | 9 | Expired |
| US8390100B2 | Conductive oxide electrodes | Electricity | 7 | Active |
| US10707484B2 | Structurally controlled deposition of silicon onto nanowires | Emerging Cross-Sectional Technologies | 7 | Active |
| US6709882B2 | Planar lightwave circuit active device metallization process | Physics | 4 | Expired |
| US7832090B1 | Method of making a planar electrode | Emerging Cross-Sectional Technologies | 4 | Active |
| US11289701B2 | Structurally controlled deposition of silicon onto nanowires | Emerging Cross-Sectional Technologies | 3 | Active |
| US8268667B2 | Memory device using ion implant isolated conductive metal oxide | Electricity | 1 | Active |
| US11855279B2 | Structurally controlled deposition of silicon onto nanowires | Emerging Cross-Sectional Technologies | 1 | Active |
| US12176526B2 | Compositionally modified silicon coatings for use in a lithium ion battery anode | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.