Composition and method for polishing in metal CMP

US6616717B2 · kind B2 · utility

Assignee

• Rodel Holdings, Inc. · US

Inventors

• Vikas Sachan · Hockessin, US
• Elizabeth A. (Kegerise) Langlois · Newark, US
• Qianqiu (Christine) Ye · Wilmington, US
• Keith G. Pierce · Colorado Springs, US
• Craig Lack · Wilmington, US
• Terence M. Thomas · Newark, US
• Peter A. Burke · Portland, US
• David Gettman · Bear, US
• Sarah Lane · Elkton, US

Key dates

• Filing date: May 16, 2001
• Grant date: Sep 9, 2003
• Expiry date: Aug 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31053
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.