SOI substrate and method for production thereof
US6617034B1 · kind B1 · utility
7Cited by
6References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 1, 2000 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.