Method of fabricating an image sensor

US6617189B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Tze-Jing Chen · 溪州鄉, TW
• Ching-Chung Chen · New Taipei, TW
• Tung-Hu Lin · Taipei, TW
• Chen-Bin Lin · Taipei, TW
• Chi-Rong Lin · Wang'an Town, TW

Key dates

• Filing date: May 28, 2002
• Grant date: Sep 9, 2003
• Expiry date: May 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8063

Abstract

A method of fabricating an image sensor on a semiconductor substrate including a sensor array region is introduced. First, an R/G/B color filter array (CFA) is formed on portions of the semiconductor substrate corresponding to the sensor array region. Then, a spacer layer is formed on the R/G/B CFA, and a plurality of U-lens is formed on the spacer layer corresponding to the R/G/B CFA. Afterwards, a buffer layer is coated to fill a space between the U-lens, and a low-temperature passivation layer is deposited on the buffer layer and the U-lens at a temperature of about 300° C. or less to prevent the R/G/B CFA from damage.