Electrically programmable memory element with multi-regioned contact
US6617192B1 · kind B1 · utility
247Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2000 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Oct 3, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.