Multiple stage deposition process for filling trenches
US6617224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.