Method of machining silicon
US6617225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Aug 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67316
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating parts of silicon, preferably virgin polysilicon formed by chemical vapor deposition of silane, and assembling them into a complex structure, such as a silicon tower or boat for removably supporting a plurality of silicon wafers during thermal processing. The virgin polysilicon is annealed to above 1025° C. before it is machined into a predetermined shape. After machining, the silicon parts are annealed in an oxygen ambient. The machined parts are then assembled and joined together followed by another anneal of the assembled structure. A preferred embodiment of the tower includes four legs secured on their ends to two bases. A plurality of slots are cut in the legs allowing slidable insertion of the wafers and support for them. The bases may be either virgin poly or monocrystalline silicon and be either integral or composed of multiple parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.