Semiconductor device and method for manufacturing the same
US6617226B1 · kind B1 · utility
44Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jul 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.