Optically readable ferroelectric memory cell
US6617629B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically writeable, optically readable, ferroelectric memory cell for nonvolatilely storing a single bit. The memory cell has an optically polarizeable translucent ferroelectric layer located between first and second translucent metal layers. The metal layers are used to electrically write an optical polarization state into the translucent ferroelectric layer. A translucent insulator layer, wire grid polarizer, a second translucent insulator layer and light sensing diode region are, in turn, attached to the second translucent metal layer. A polarized light beam, from a light source, is shone onto the first translucent metal layer, in order to optically read out the optical polarization state of the translucent ferroelectric layer of the memory cell. Alternately, two such memory cells can be used together in order to store a single bit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.