Semiconductor device with capacitor and process for manufacturing the device
US6617666B2 · kind B2 · utility
8Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Mar 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first insulating film comprising an opening, a capacitor formed at a selected position in the opening, a second insulating film formed at least in the opening, and a third insulating film formed on the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.