Patent · US Expired

Electrostatic discharge cell of integrated circuit

US6618230B2 · kind B2 · utility

7Cited by
4References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 23, 2001
Grant dateSep 9, 2003
Priority date
Expiry dateJul 23, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/811

Abstract

The present invention provides an IC ESD cell, which is applicable to multiple-power-input and mixed-voltage ICs and capable of maintaining power sequence independence of each power source. The ESD cell of the present invention comprises a voltage selector circuit, which connects two separate power sources to select the one having a higher potential as the output voltage. An NMOS is used to connect the two separate power sources. An RC circuit is connected to an output of the voltage selector circuit to distinguish ESD event from normal power source. Therefore, the channel of the NMOS will be conducted to let the ESD current be led out via a designed path, hence preventing internal circuits of an IC from damage and accomplishing the object of whole chip protection.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.