Optoelectronic semiconductor component

US6618410B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Fischer · Mesa, US
• Günter Reuscher · Würzburg, DE
• Thomas Litz · Würzburg, DE
• Gottfried Landwehr · Würzburg, DE

Key dates

• Filing date: Dec 6, 1999
• Grant date: Sep 9, 2003
• Expiry date: Dec 6, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3095
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An Optoelectronic semiconductor component, in which an active zone is disposed above a semiconductor substrate, and which zone is disposed between at least one first resonator mirror layer and at least one second resonator mirror layer. The first and the second mirror layer each have a semiconductor material of a first conductivity type. At least one first heavily doped junction layer of the first conductivity type and at least one second heavily doped junction layer of a second conductivity type are disposed between the active zone and one of the two mirror layers in such a way that the second heavily doped, degenerate junction layer lies between the active zone and the first heavily doped, degenerate junction layer.