Dual III-V nitride laser structure with reduced thermal cross-talk
US6618418B2 · kind B2 · utility
15Cited by
7References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 15, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Nov 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.