Method and apparatus for correcting the offset induced by field effect transistor photo-conductive effects in a solid state x-ray detector
US6618604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/626
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in solid state x-ray detectors includes dedicating rows at the beginning and end of an x-ray detector scan. The dedicated rows may be used to measure the “signal” induced by the photo-conductivity of FET switches in solid state x-ray detectors. Since the signal induced by FET photo-conductivity decays over time, the measurements taken at the beginning and end of a detector scan may be used to predict by interpolation the amount of signal contributed by photo-conductive induced offset for each row of the detector scan on a column by column basis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.