Target sidewall design to reduce particle generation during magnetron sputtering
US6620296B2 · kind B2 · utility
17Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/564
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.