Plasma treatment of low-k dielectric films to improve patterning
US6620560B2 · kind B2 · utility
5Cited by
10References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Oct 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plasma treating a low-k dielectric layer (104) using an oxidation reaction (e.g., O2) to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130, 132). The plasma treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130, 132), during a rework of the pattern (130, 132), or between via and trench patterning to reduce resist poisoning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.