Inventor · Dallas, TX, US

Andrew John McKerrow

27Patents
9h-index
68Co-inventors
78Inventor score

Filing activity: Jun 22, 2000 → Dec 20, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US10347547B2 Suppressing interfacial reactions by varying the wafer temperature throughout deposition Electricity 383 Active
US9824884B1 Method for depositing metals free ald silicon nitride films using halide-based precursors Electricity 324 Active
US8637411B2 Plasma activated conformal dielectric film deposition Electricity 95 Active
US8999859B2 Plasma activated conformal dielectric film deposition Electricity 55 Active
US9570274B2 Plasma activated conformal dielectric film deposition Electricity 29 Active
US6720247B2 Pre-pattern surface modification for low-k dielectrics using A H2 plasma Electricity 23 Expired
US10043655B2 Plasma activated conformal dielectric film deposition Electricity 23 Active
US6838300B2 Chemical treatment of low-k dielectric films Electricity 16 Expired
US10454029B2 Method for reducing the wet etch rate of a sin film without damaging the underlying substrate Electricity 9 Active
US6620560B2 Plasma treatment of low-k dielectric films to improve patterning Electricity 5 Expired
US9502255B2 Low-k damage repair and pore sealing agents with photosensitive end groups Electricity 4 Active
US7678713B2 Energy beam treatment to improve packaging reliability Electricity 3 Active
US6831008B2 Nickel silicide—silicon nitride adhesion through surface passivation Electricity 3 Expired
US6861348B2 Pre-pattern surface modification of low-k dielectrics Electricity 1 Expired
US11239420B2 Conformal damage-free encapsulation of chalcogenide materials Electricity 1 Active
US6872665B1 Process flow for dual damescene interconnect structures Electricity 1 Expired
US10319582B2 Methods and apparatus for depositing silicon oxide on metal layers Electricity 1 Active
US9816193B2 Configuration and method of operation of an electrodeposition system for improved process stability and performance Chemistry; Metallurgy 1 Active
US7342315B2 Method to increase mechanical fracture robustness of porous low k dielectric materials Electricity 1 Expired
US10020188B2 Method for depositing ALD films using halide-based precursors Electricity 0 Active
US6806103B1 Method for fabricating semiconductor devices that uses efficient plasmas Electricity 0 Expired
US11075127B2 Suppressing interfacial reactions by varying the wafer temperature throughout deposition Electricity 0 Active
US11832533B2 Conformal damage-free encapsulation of chalcogenide materials Electricity 0 Active
US10240236B2 Clean resistant windows for ultraviolet thermal processing Performing Operations; Transporting 0 Active
US7087518B2 Method of passivating and/or removing contaminants on a low-k dielectric/copper surface Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.