Opto-electronic device integration
US6620642B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of integrating a chip with a backside active optical chip is described. The backside active optical chip has at least one optical device, having an active side, including an optically active region and an optically inactive region each abutting a substrate, a bonding side opposite the active side, and a device thickness. The method involves if the substrate has a substrate thickness in excess of 100 microns over the optically active region, thinning the substrate over the optically active region while leaving at least some substrate over the optically inactive region; bonding the optical chip to the electronic chip using a flip chip process; and creating access ways in the substrate over optically active regions. A hybrid electro-optical chip having an electronic chip and a backside active optical chip is also described, wherein the hybrid electro-optical chip is created by one of the described processes. A module is also described. The module has an optical chip having at least one laser, the at least one laser having opposed mirrors defining a cavity therebetween of a thickness, an electronic chip bonded to the optical chip, a substrate over an active region of the laser…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.