Method of forming a planar polymer transistor using substrate bonding techniques

US6620657B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Tricia Breen · Tarrytown, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Louis L. Hsu · Fishkill, US
• Li-Kong Wang · Montvale, US
• Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Jan 15, 2002
• Grant date: Sep 16, 2003
• Expiry date: Jan 15, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/466

Abstract

A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistors made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.