Method of manufacturing nonvolatile memory cell
US6620684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
The present invention relates to a method of manufacturing a nonvolatile memory cell. The present invention uses tungsten (W) as an upper layer of a control gate electrode in order to integrate the memory cell and performs an ion implantation process for forming a source region and a drain region before a selective oxidization process that is performed to prevent abnormal oxidization of tungsten (W). Therefore, the present invention can reduce a RC delay time of word lines depending on integration of the memory cell and also secure a given distance between a silicon substrate and a tunnel oxide film. As a result, the present invention can solve a data retention problem of the flash memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.