Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
US6620697B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Sep 24, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET) having a self-aligned drift region and method for forming the same is provided. Specifically, the SiC LMOSFET includes a source region, a drift region and a drain region. The source and drain regions are implanted using non self-aligned technology (i.e., prior to formation of the gate electrode and the gate oxide layer), while the drift region is implanted using self-aligned technology (i.e., after formation of the gate electrode and the gate oxide layer). By self-aligning the drift region to the gate electrode, the overlap between the two is minimized, which reduces the capacitance of the device. When capacitance is reduced, performance is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.