Silicided undoped polysilicon for capacitor bottom plate
US6620700B2 · kind B2 · utility
3Cited by
10References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor (110) having a bottom plate (104) that includes undoped polysilicon (106) which has been silicided (108). An advantage of the invention is providing a capacitor (110) having reduced parasitic capacitance to the substrate (100) and reduced sheet resistance of the bottom plate (104).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.