Method for reducing oxidation encroachment of stacked gate layer
US6620714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2002 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing oxidation encroachment of stacked gate layer is provided by forming a silicon oxynitride layer on the sidewall surface of the stacked gate layer. A tilted ion implantation step is performed to implant nitrogen ions into the sidewall surface of the stacked gate layer to rich nitrogen containing in the sidewall surface of the stacked gate layer. An oxygen-annealing step is subsequently performed to form a silicon oxynitride layer on the sidewall surface of the stacked gate layer. The silicon oxynitride layer can prevent the polysilicon layer in the stacked gate layer being continuously encroached from the oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.