Plasma etching method
US6620737B2 · kind B2 · utility
7Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The temperature of the specimen holder 6 in the vacuum container 1 is lowered with the thermal control unit 11 to adjust the temperature of the specimen 7 composed of a silicon substrate to a low temperature of 0° C. or lower. Then, trenches are formed in the specimen 7 by plasma etching using an etching gas comprising SF6 as the main constituent and optionally O2 as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.