Trench DMOS transistor with embedded trench schottky rectifier
US6621107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Aug 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
Abstract
A merged device is that comprises a plurality of MOSFET cells and a plurality of Schottky rectifier cells, as well as a method of designing and making the same. According to an embodiment of the invention, the MOSFET cells comprise: (a) a source region of first conductivity type formed within an upper portion of a semiconductor region, (b) a body region of second conductivity type formed within a middle portion of the semiconductor region, (c) a drain region of first conductivity type formed within a lower portion of the semiconductor region, and (d) a gate region provided adjacent the source region, the body region, and the drain region. The Schottky diode cells in this embodiment are disposed within a trench network and comprise a conductor portion in Schottky rectifying contact with the lower portion of the semiconductor region. At least one MOSFET cell gate region is positioned along a sidewall of the trench network and adjacent at least one Schottky diode cell in this embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.