Scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate

US6621115B2 · kind B2 · utility

Assignee

• Integrated Memory Technologies, Inc. · US

Inventors

• Ching-Shi Jenq · Los Altos Hills, US
• Ching Dong Wang · Singapore, SG

Key dates

• Filing date: Nov 6, 2001
• Grant date: Sep 16, 2003
• Expiry date: Nov 6, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6892

Abstract

A scalable flash EEPROM cell having a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate is a spacer having a bottom surface positioned over a second portion of the channel and is insulated therefrom. The floating gate has two side surfaces extending from the bottom surface. A control gate is over the floating gate and includes a first portion that is adjacent the floating gate first side surface, and a second portion adjacent the floating gate second side surface.