Semiconductor device
US6621132B2 · kind B2 · utility
101Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Aug 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the n-type drift region and p-type partition region repeating at a first repeating pitch, and trenches each containing a gate electrode buried therein, the trenches being arranged repeatedly at a second repeating pitch wider than the first repeating pitch. The device further includes one or more n-type channel regions between a p-type partition regions and a p-type well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.