Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
US6621145B2 · kind B2 · utility
5Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.