Yosuke Shimamune
44Patents
10h-index
19Co-inventors
68Inventor score
Filing activity: May 30, 2001 → Dec 13, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7667227B2 | Semiconductor device and fabrication method thereof | Emerging Cross-Sectional Technologies | 67 | Active |
| US7875521B2 | Semiconductor device and production method thereof | Electricity | 18 | Active |
| US7390707B2 | Semiconductor device fabrication method | Electricity | 17 | Active |
| US7378305B2 | Semiconductor integrated circuit and fabrication process thereof | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7816766B2 | Semiconductor device with compressive and tensile stresses | Electricity | 14 | Expired |
| US7579617B2 | Semiconductor device and production method thereof | Electricity | 12 | Expired |
| US7202120B2 | Semiconductor integrated circuit device and fabrication process thereof | Electricity | 11 | Expired |
| US7033868B2 | Semiconductor device and method of manufacturing same | Electricity | 11 | Expired |
| US8853673B2 | Semiconductor device and fabrication method thereof | Emerging Cross-Sectional Technologies | 10 | Active |
| US7791064B2 | Semiconductor device and fabrication method thereof | Emerging Cross-Sectional Technologies | 10 | Active |
| US7683362B2 | Semiconductor device and production method thereof | Electricity | 10 | Active |
| US7262465B2 | P-channel MOS transistor and fabrication process thereof | Electricity | 9 | Expired |
| US7518188B2 | P-channel MOS transistor and fabrication process thereof | Electricity | 8 | Expired |
| US7446394B2 | Semiconductor device fabricated by selective epitaxial growth method | Electricity | 8 | Active |
| US9112027B2 | Semiconductor device and fabrication method thereof | Emerging Cross-Sectional Technologies | 8 | Active |
| US8232191B2 | Semiconductor device manufacturing method | Emerging Cross-Sectional Technologies | 6 | Active |
| US8338831B2 | Semiconductor device and manufacturing method thereof | Electricity | 6 | Active |
| US7626215B2 | Semiconductor device and method of manufacturing the same | Electricity | 6 | Active |
| US8586438B2 | Semiconductor device and manufacturing method thereof | Electricity | 5 | Active |
| US8466450B2 | Semiconductor device and fabrication method thereof | Emerging Cross-Sectional Technologies | 5 | Active |
| US8455325B2 | Method of manufacturing a semiconductor device | Electricity | 5 | Active |
| US6621145B2 | Semiconductor device having a metal-semiconductor junction with a reduced contact resistance | Electricity | 5 | Expired |
| US8283226B2 | Method for manufacturing semiconductor device | Electricity | 4 | Active |
| US7985641B2 | Semiconductor device with strained transistors and its manufacture | Electricity | 4 | Active |
| US8455324B2 | Method of manufacturing a semiconductor device | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.