Substrate voltage selection circuit
US6621327B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Transistors are supplied with either a first power supply voltage or a second power supply voltage lower than the first power supply voltage. During an operation period of the transistors, substrate voltages of the transistors are set at a value between the first power supply voltage and the second power supply voltage. The substrate voltages are changed to lower threshold voltages of the transistors so that the transistors improve in drivability and operating speed. Therefore, neither a booster for generating higher voltages nor a pumping circuit for generating negative voltages is particularly required. This allows a reduction in layout size. Besides, in accordance with the operating state of the semiconductor integrated circuit, the transistor characteristics can be easily changed by changing the threshold voltages of the transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.