Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity
US6621666B2 · kind B2 · utility
11Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Feb 28, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Nov 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49048
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic walls from appearing. A pair of bias layers 4 are made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic walls from appearing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.