Method and sensor for detecting strain using shape memory alloys
US6622558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and sensor for detecting strain using shape memory alloys is disclosed. The sensor comprises a substrate material, a flexible diaphragm provided on the substrate material and a thin film SMA material deposited on the flexible diaphragm. The thin film SMA material is capable of undergoing a phase transformation in response to a physical stimulus being applied thereto. During such a phase transformation, a change occurs in the electrical resistance of the thin film SMA material. By measuring the value of the electrical resistance of the thin film SMA material immediately before and after the thin film SMA material undergoes a phase transformation, the difference in the value of the electrical resistance can be determined and utilized to determine the magnitude of the physical stimulus that was applied to the thin film SMA material causing it to undergo a phase transformation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.