Crystal growth method
US6623560B2 · kind B2 · utility
27Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer, and growing a second nitride semiconductor layer over a region including the surface of the mask layer through crystal growth from the irregularities. Through-type dislocations can be reliably prevented from propagation due to the discontinuity of crystals at the irregularities and also to lateral crystal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.