Method for fabricating ferroelectric capacitor of semiconductor device
US6623988B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 18, 2002 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Apr 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a ferroelectric capacitor of a semiconductor device is disclosed. This method carries out a patterning process of a capacitor electrode, which is difficult to handle in a dry etching process, with a lift-off method using a negative slope, photomask thereby ensuring stability in a fabricating process and enabling a control of parasitic capacitance. The method for fabricating a ferroelectric capacitor of a semiconductor device comprises depositing a photoresist, forming a mask by patterning the photoresist to have sides with a negative slope from an upper portion of the sides to a lower portion of the sides, forming a material layer for forming electrodes or a ferroelectric material layer to prevent deposition materials to come into contact with the side of the mask, eliminating the material layer for forming electrodes or the ferroelectric material layer on an upper surface of the mask with a lift-off method, while eliminating the mask at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.