Method of measuring meso-scale structures on wafers
US6623991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Oct 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.