Substrate and method of manufacturing the same
US6624047B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded substrate stack into two substrates at the porous layer, defects in the separation step are prevented. A first substrate having a porous layer inside, a single-crystal Si layer on the porous layer, and an SiO2 layer on the single-crystal Si layer is bonded to a second substrate. The outer peripheral portion of the substrate is oxidized to make the outer peripheral edge of the single-crystal Si layer retreat toward the inside to prepare a bonded substrate stack in which the outer peripheral edge of the single-crystal Si layer is located inside the outer peripheral edge of the bonding region. After that, the bonded substrate stack is separated into two substrates at the porous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.