Enhanced etching/smoothing of dielectric surfaces
US6624081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Oct 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3151
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.