Effective solution and process to wet-etch metal-alloy films in semiconductor processing
US6624086B1 · kind B1 · utility
5Cited by
7References
7Claims
0Family size
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Key dates
| Filing date | Aug 16, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Aug 16, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A solution and method is described for etching TaN, TiN, Cu, FSG, TEOS, and SiN on a silicon substrate in silicon device processing. The solution is formed by combining HF at 49% concentration with H2O2 at 29%-30% concentration in deionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.