Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material
US6624987B1 · kind B1 · utility
21Cited by
7References
3Claims
0Family size
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Key dates
| Filing date | May 31, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | May 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49034
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect head which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the head and a magnetic recording apparatus utilizing the head. This magnetoresistive effect head utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.