Hiroaki Honjou
10Patents
6h-index
23Co-inventors
62Inventor score
Filing activity: Nov 29, 1999 → Sep 13, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6542342B1 | Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer | Physics | 36 | Expired |
| US6538861B1 | MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT | Electricity | 25 | Expired |
| US6624987B1 | Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material | Emerging Cross-Sectional Technologies | 21 | Expired |
| US9478309B2 | Magnetic-domain-wall-displacement memory cell and initializing method therefor | Electricity | 12 | Active |
| US6950290B2 | Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer | Physics | 11 | Expired |
| US6798626B2 | Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8300456B2 | Magnetic random access memory and method of manufacturing the same | Electricity | 4 | Active |
| US7372673B2 | Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer | Physics | 4 | Expired |
| US8908423B2 | Magnetoresistive effect element, and magnetic random access memory | Emerging Cross-Sectional Technologies | 2 | Active |
| US9406869B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.