Semiconductor laser device and fabrication method thereof
US6625189B1 · kind B1 · utility
3Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Mar 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes an InP substrate and a multi-layered structure formed on the InP substrate, wherein the multi-layered structure includes at least a plurality of active regions for outputting a laser beam, and the plurality of active regions each are provided in each of a plurality of grooves dented toward the InP substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.