Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
US6625367B2 · kind B2 · utility
5Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Oct 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0422
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region, the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.