Adaptive plasma characterization system
US6627464B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | May 8, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05B13/0285
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An adaptive plasma characterization system and method characterize a semiconductor plasma process using fuzzy logic and neural networks. The method includes the step of collecting input and output training data, where the input training data is based on variables associated with electrical power used to control a plasma chamber and results from execution of the plasma process. The method further includes the step of generating fuzzy logic-based input and output membership functions based on the training data. The membership functions enable estimation of an output parameter value of the plasma process, such that the membership functions characterize the plasma process with regard to the output parameter. Modifying the membership functions based on a neural network learning algorithm and output data provides ability to learn. Thus, etching process parameters such as etch rate, end point detection, and chamber maintenance can all be characterized in a manner that allows the system to operate autonomously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.